Deep Level Defects Related to Carbon Displacements in n- and p-Type 4H-SiC
Deep Level Defects Related to Carbon Displacements in n- and p-Type 4H-SiC
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与 n 型和 p 型 4H-SiC 中碳置换相关的深层缺陷
DOI：
10.4028/www.scientific.net/msf.527-529.489
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
H. Tsuchida
中科院分区：
文献类型：
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作者：
L. Storasta;I. Kamata;Tomonori Nakamura;H. Tsuchida
研究了低能电子辐照后p型和n型4 H-SiC中的电活性深能级缺陷。通过用200 keV的电子辐照产生本征缺陷，所述电子具有足以仅移动SiC晶格中的碳原子的能量。在相同的辐照条件下制备的p型和n型掺杂样品之间的缺陷光谱进行了比较。我们探讨了导电和价带侧的带隙，通过使用电容瞬态技术与电气和光学陷阱填充。我们已经发现，在p型外延层的缺陷谱显着不同的n型。在p型样品中检测不到通常存在于辐照n型材料中的Z1/Z2、EH 1和EH 3电子陷阱。在导带边缘以下1.6 eV处的电子陷阱存在于n型和p型样品中，处于相同的能量位置并且具有相似的浓度，因此它可能与相同类型的缺陷有关。我们还发现了一个新的空穴陷阱在p型外延层在能量EV + 0.66 eV。
We have investigated the electrically active deep level defects in p- and n-type 4H-SiC after low energy electron irradiation. Intrinsic defects were created by irradiation with 200 keV electrons, with energy sufficient to move only the carbon atoms in SiC lattice. Defect spectra were compared between the p- and n-doped samples prepared under identical irradiation conditions. We probed both conduction and valence band sides of the band-gap by using capacitance transient techniques with electrical and optical trap filling. We have found that the defect spectrum in the p-type epilayers differs significantly from the n-type. The Z1/Z2, EH1 and EH3 electron traps which are usually present in irradiated n-type material could not be detected in p-type samples. An electron trap at 1.6 eV below the conduction band edge is present in both n- and p-type samples at the same energy position and with similar concentration, therefore it is probably related to the same type of defect. We have also found a new hole trap in p-type epilayers at energy EV + 0.66 eV.