Studies on Sputtered Cu-Zn-Sn-O Precursor to Fabricate Cu2ZnSnS4 Thin Films
Studies on Sputtered Cu-Zn-Sn-O Precursor to Fabricate Cu2ZnSnS4 Thin Films
复制标题
溅射Cu-Zn-Sn-O前驱体制备Cu2ZnSnS4薄膜的研究
DOI：
10.1515/zna-2018-0177
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发表时间：
2018-10-01
影响因子：
1.8
通讯作者：
Guo, Jie
中科院分区：
文献类型：
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作者：
Liu, Xinxing;Hao, Ruiting;Guo, Jie
采用射频磁控溅射Cu-Zn-Sn-O（CZTO）前驱体，经硫化处理制备了Cu 2 ZnSnS 4（CZTS）薄膜。在这里，我们扩展了最近的工作在该领域的制备CZTO前驱体的一种新的方法溅射ZnO/Sn/Cu目标。系统研究了一步和两步退火工艺对CZTO前驱体的结构、形貌、光学和电学性能的影响。并对硫化过程中形成基相的预退火步骤进行了讨论。两步退火工艺被发现影响元素Sn的组合物轻微，但显着改善结晶度，CZTS/Mo界面条件，表面粗糙度，和电气性能。两步退火的CZTS薄膜具有优异的光学和电学性能，光学带隙为1.51 eV，空穴浓度为2.4 × 10（17）cm（-3），空穴迁移率为1.97 cm（2）/（V中心点s）。此外，具有小晶粒和空隙的CZTS/Mo界面得到显著改善。成功制备了基于CZTS的太阳能电池器件。电流-电压（J-V）曲线特征表明，随着CZTS/Mo界面和表面形貌的改善，短路电流有增大的趋势。结果表明，基于两步退火CZTS薄膜的器件具有更好的性能，开路电压为553 mV，短路电流为7.2 mA，中心点cm（-2），填充因子为37.8%，转换效率为1.51%。
The Cu2ZnSnS4 (CZTS) thin films were fabricated by sulfurization of radiofrequency magnetron sputtered Cu-Zn-Sn-O (CZTO) precursors. Here, we extend recent works in the field of fabricating CZTO precursors by a new approach sputtering ZnO/Sn/Cu targets. The effects of one-step and two-step annealing processes applied for CZTO precursors on the structure, morphology, optical, and electrical properties were investigated systematically. The preannealing step of fundamental phase formation in the sulfurization process was also discussed. The two-step annealing process was found to affect the composition of element Sn slightly but significantly improved crystallinity, CZTS/Mo interfacial conditions, surface roughness, and electrical properties. The two-step annealed CZTS thin films had excellent optical and electrical properties with an optical band gap of 1.51 eV, a hole concentration of 2.4 x 10(17) cm(-3), and a hole mobility of 1.97 cm(2)/(V center dot s). In addition, the CZTS/Mo interface with small grains and voids were significantly improved. CZTS-based solar cell devices were successfully fabricated. The characteristics of current-voltage (J-V) curves indicated that short-circuit currents had a tendency to increase with the improvement of CZTS/Mo interface and surface morphology. As a result, the device based on two-step annealed CZTS thin films exhibited better performance with an open-circuit voltage of 553 mV, short-circuit current of 7.2 mA center dot cm(-2), a fill factor of 37.8%, and a conversion efficiency of 1.51%.