Simulation of deep submicron SOI N-MOSFET considering the velocity overshoot effect
Simulation of deep submicron SOI N-MOSFET considering the velocity overshoot effect
复制标题
考虑速度过冲效应的深亚微米 SOI N-MOSFET 仿真
DOI：
--
复制
发表时间：
1995
影响因子：
4.9
通讯作者：
R. Dutton
中科院分区：
文献类型：
--
作者：
Woo;F. Assaderaghi;Young;Hong;Chenming Hu;R. Dutton
使用流体动力学模型、能量传输模型和漂移扩散模型，对具有相对均匀沟道场和电荷的 0.22 /spl mu/m SOI MOSFET 进行了一组数值模拟。基于先进模型（流体动力学和能量传输）的模拟结果显示了 I-V 特性几乎相同的结果，并且与实验结果非常吻合，而漂移扩散模型的结果则不然。仿真结果还表明，流体动力学模型和能量传输模型都很好地处理了速度超调对0.12 /spl mu/m 器件I-V 特性的影响。<<ETX>>
A set of numerical simulations were performed on 0.22 /spl mu/m SOI MOSFET's with relatively uniform channel field and charge using the hydrodynamic model, the energy transport model, and the drift-diffusion model. The simulation results based on the advanced models (hydrodynamic and energy transport) show nearly identical results for the I-V characteristics and they agreed quite well with the experimental results, while the results from drift-diffusion model do not. Also the simulation results show that both the hydrodynamic and energy transport models handle the effect of velocity overshoot on the I-V characteristic of the 0.12 /spl mu/m device well.<<ETX>>