Complete polarization mode control of long-wavelength tunable vertical-cavity surface-emitting lasers over 65-nm tuning, up to 14-mW output power
Complete polarization mode control of long-wavelength tunable vertical-cavity surface-emitting lasers over 65-nm tuning, up to 14-mW output power
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DOI：
10.1109/jqe.2003.816110
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发表时间：
2003-09-01
影响因子：
2.5
通讯作者：
Tayebati, P
中科院分区：
文献类型：
--
作者：
Matsui, Y;Vakhshoori, D;Tayebati, P
实验证明，在室温下，长波长可调谐垂直腔面发射激光器在65 nm的调谐范围和整个输出功率范围(<；14.6 mW)内实现了稳定的偏振模式运转。偏振模式控制是利用量子阱的各向异性增益特性实现的，这是由于界面原子之间的键长不同，加上应力引起的单轴外部应变。实验验证了新提出的基于自旋翻转模型(SFM)的偏振控制方案，该模型包含了详细的增益特性、腔驻波效应、自加热效应和应变效应。仿真结果与偏振开关特性和输出功率的实验结果吻合较好。讨论了外加应变、量子井界面应变的相对重要性以及增益各向异性与波长的关系。研究还表明，InP基垂直腔面发射激光器(VCSEL)的快速自旋弛豫时间是抑制其椭圆偏振态的主要原因。在超过2000h的可靠性测试中，偏振控制方案的有效性得到了突出的体现，在整个波长和泵浦功率范围内都保持了34db的高偏振抑制比。检测到椭圆偏振态对光泵浦光激光器的影响，这可以解释为自旋极化电子的记忆效应，支持了SFM的有效性。
We experimentally demonstrate a stable polarization mode operation in long-wavelength tunable vertical-cavity surface-emitting lasers over a 65-nm tuning range and the entire output power range (< 14.6 mW) at room temperature. The polarization mode control was achieved by utilizing anisotropic gain properties of quantum wells due to the difference in bond lengths between the constituent atoms at the interfaces combined with uni-axial external strain induced by a stressor. The experiments were conducted to verify this newly proposed polarization control scheme based on the spin flip model (SFM) developed to incorporate the detailed gain properties, cavity standing wave effect, self-heating effect, and strain effect. The experimental results on the tuning characteristics of polarization switching behavior and output powers were reproduced in highly agreeable manner by simulations. The relative importance of the external strain, interfacial strain at quantum wells, and the wavelength dependence of gain anisotropy are also discussed. It is also shown that the fast spin relaxation times for InP-based vertical-cavity surface-emitting lasers (VCSELs) was responsible for the inhibition of elliptic polarization states often observed for GaAs-based VCSELs. The effectiveness of the polarization control scheme was highlighted by the observed high polarization suppression ratio of 34 dB maintained for the entire wavelength and pump power ranges during the reliability testing over 2000 h. The influence of the elliptic polarization state for the optical pump laser was detected which could be explained as a memory effect of the spin-polarized electrons, supporting the validity of the SFM.