Selective synthesis of zigzag-type aligned carbon nanotubes on SiC (000-1) wafers
Selective synthesis of zigzag-type aligned carbon nanotubes on SiC (000-1) wafers
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DOI：
10.1016/s0009-2614(02)01463-x
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发表时间：
2002-12-20
影响因子：
2.8
通讯作者：
Shibata, N
中科院分区：
文献类型：
--
作者：
Kusunoki, M;Suzuki, T;Shibata, N
通过对抛光良好的碳化硅单晶进行表面分解，选择性地制备了锯齿形碳纳米管。在真空条件下，以很小的升温速率将SiC晶片加热到1500℃。透射电子显微镜（TEM）和电子衍射图显示，垂直于SiC（0 0 0 -1）表面形成的排列良好的碳纳米管几乎都是双壁的锯齿形碳纳米管。高分辨率电子显微镜（HREM）分析结果表明，SiC晶体中的Si-C六方网络是由分解过程中剩余的碳层坍塌而形成之字形结构。(C) 2002 Elsevier Science B.V.版权所有
Zigzag-type carbon nanotubes have been selectively produced by surface decomposition of a well-polished SiC single crystal. The SiC wafer was heated to 1500 degreesC at a very small heating rate under vacuum. Transmission electron microscopy (TEM) and electron diffraction patterns revealed that almost all the well-aligned carbon nanotubes formed perpendicular to the SiC (0 0 0 -1) surface were double-walled and of zigzag type. The results of high-resolution electron microscopy (HREM) indicate that the zigzag type structure evolves from the Si-C hexagonal networks in the SiC crystal by the collapse of carbon layers remaining after the process of decomposition. (C) 2002 Elsevier Science B.V. All rights reserved.