Electron Bombardment Conductivity in Diamond
Electron Bombardment Conductivity in Diamond
复制标题
金刚石中的电子轰击电导率
DOI：
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发表时间：
1948
期刊：
影响因子：
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通讯作者：
K. Mckay
中科院分区：
文献类型：
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作者：
K. Mckay
用能量高达14，000 eV的初级电子研究了金刚石的电子轰击导电性。使用交变场方法，其减少或消除内部空间电荷场的影响。给出了电子和空穴载流子的内部产额随晶场变化的数据。内部产率高达600。将实验曲线拟合到无空间电荷晶体的理论曲线上，由此得到了每个入射初级电子在导带中产生的电子数、传导电子的可能寿命和晶体陷阱密度的合理值。实验导致空间电荷中和的假设。在高晶场观察到的电流波动的可能原因进行了讨论。
A study has been made of electron bombardment conductivity in diamond using primary electrons of energies up to 14,000 ev. An alternating field method is used which reduces or eliminates the effects of internal space charge fields. Data on internal yields as a function of crystal field are given for both electron and positive hole carriers. Internal yields as high as 600 have been attained. The experimental curves are fitted to a theoretical curve for the space charge free crystal from which are derived reasonable values for the number of electrons produced in the conduction band per incident primary electron, the probable life time of the conduction electrons and the crystal trap density. Experiments are described which lead to a hypothesis of space charge neutralization. A possible cause of the current fluctuations observed at high crystal fields is discussed.