High-Power GaN-Based Light-Emitting Diodes Using Thermally Stable and Highly Reflective Nano-Scaled Ni–Ag–Ni–Au Mirror
High-Power GaN-Based Light-Emitting Diodes Using Thermally Stable and Highly Reflective Nano-Scaled Ni–Ag–Ni–Au Mirror
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DOI：
10.1109/lpt.2011.2166952
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发表时间：
2011-09
影响因子：
2.6
通讯作者：
I. Ju;Yongwoo Kwon;C. Shin;Kanghyun Kim;S. Bae;Donghyun Kim;Jehyuk Choi;C. Ko
中科院分区：
文献类型：
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作者：
I. Ju;Yongwoo Kwon;C. Shin;Kanghyun Kim;S. Bae;Donghyun Kim;Jehyuk Choi;C. Ko
在本研究中，我们利用热稳定的奈米级镍银镍金反射镜制作出高功率氮化镓基垂直发光二极体。纳米Ni-Ag-Ni-Au（5/2000/1000/2000 A）反射镜经600 °C处理1 min后，比接触电阻为6.0 × 10-4 Ω·cm 2，反射率从89.5%提高到93.0%。反射率的增加是由于Ni接触层向Ag层的扩散。此外，即使在晶片与石墨衬底在320 °C下热结合5分钟之后，反射镜的反射率也几乎没有劣化，这意味着所提出的反射镜是热可靠的。当注入电流为350 mA时，经600 °C热处理1 min的纳米VLED（芯片尺寸：1 × 1 mm 2）的光输出功率比未经热处理的VLED提高了8%。据我们所知，我们的纳米镜具有最高的反射率在其他银基多层反射器，因此它是一个有前途的候选人，高性能的VLED。
In this study, we have fabricated the high-power GaN based vertical light-emitting diodes (VLEDs) by exploiting a thermally stable nano-scaled Ni-Ag-Ni-Au mirror. After being treated at 600 °C for 1 min in air ambient, the nano-scaled Ni-Ag-Ni-Au (5/2000/1000/2000 A) mirror shows the specific contact resistance of 6.0 × 10-4 Ω·cm2 and its reflectivity has increased from 89.5% to 93.0%. The increment in the reflectivity is due to the diffusion of Ni contact layer into Ag layer. Moreover, the reflectivity of the mirror has hardly deteriorated even after the wafer was thermally bonded with graphite substrate at 320 °C for 5 min, meaning that the proposed mirror is thermally reliable. The light output power of the nano-scaled VLED (Chip size: 1 × 1 mm2) with thermal treatment at 600 °C for 1 min is enhanced by 8% as compared to one without thermal treatment at an injection current of 350 mA. To our knowledge, our nano-scaled mirror has the highest reflec tivity among other Ag-based multilayered reflectors, and thus it is a promising candidate for high-performance VLED.