Electron beam epitaxy of AlxGa1−xP (a new type of solid phase epitaxy produced by a high-energy electron beam)
Electron beam epitaxy of AlxGa1−xP (a new type of solid phase epitaxy produced by a high-energy electron beam)
复制标题
AlxGa1−xP 的电子束外延（高能电子束产生的新型固相外延）
DOI：
10.1063/1.98969
复制
发表时间：
1987
影响因子：
4
通讯作者：
Y. Maeda
中科院分区：
文献类型：
--
作者：
T. Wada;Y. Maeda
通过使用电子束外延技术在50 °C下分别在（111）、（100）和（110）GaP衬底上生长Al0.25Ga0.75P、Al0.5Ga0.5P和Al0.75Ga0.25P的固相外延层。真空蒸发沉积在GaP晶片上的Al层的表面以7 MeV的（0.1-1.0）×1018电子cm−2的注量辐照。在照射和去除Al层之后，从二次离子质谱仪、X射线衍射仪和反射高能电子衍射仪获得了在退火之前已经形成的外延层的产生的证据。
Solid phase epitaxial layers of Al0.25Ga0.75P, Al0.5Ga0.5P, and Al0.75Ga0.25P were grown on (111), (100), and (110) GaP substrates, respectively, by using an electron beam epitaxy technique at 50 °C. The surfaces of Al layers deposited by vacuum evaporation on GaP wafers were irradiated with a fluence of (0.1–1.0)×1018 electrons cm−2 at 7 MeV. After the irradiation and removal of the Al layers, evidence of the creation of epilayers that had been formed before annealing was obtained from a secondary‐ion mass spectrometer, an x‐ray diffractometer, and a reflection high‐energy electron diffractometer.