Noise Immune Cascaded Gate Driver Solution for Driving High Speed GaN Power Devices
Noise Immune Cascaded Gate Driver Solution for Driving High Speed GaN Power Devices
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DOI：
10.1109/ecce47101.2021.9595515
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发表时间：
2021-10
期刊：
影响因子：
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通讯作者：
A. Mirza;A. Emon;Sama Salehi Vala;F. Luo
中科院分区：
文献类型：
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作者：
A. Mirza;A. Emon;Sama Salehi Vala;F. Luo
GaN HEMT 允许快速开关，从而在其上产生高 dV/dt。与 dV/dt 相关的共模 (CM) 噪声通过栅极驱动器的隔离势垒电容传播。由于 PWM 信号线和回路之间的阻抗不匹配，会发生 CM 到差模 (DM) 噪声的转换，并使栅极驱动器输入端的 PWM 信号失真。本文研究了高 dV/dt 感应噪声对 GaN 系统中栅极驱动性能的影响。首先，分析噪声传播路径和 CM 到 DM 噪声转换，然后在硬件上进行仿真和双脉冲测试 (DPT)。结果表明，噪声失真会导致开关误触发。此外，提出了包括电源和栅极驱动器的级联级可以通过增加噪声路径阻抗来抑制噪声。所提出的方法在硬件上进行了验证，在 400 V 电压下，关断和开启 dV/dt 分别等于 88 V/ns 和 62 V/ns，没有误触发。
GaN HEMTs permit fast switching, leading to high dV/dt being generated across them. The Common Mode (CM) noise associated with the dV/dt propagates through the gate drivers’ isolation barrier capacitance. Due impedance mismatch between the PWM signal line and return, CM to Differential Mode (DM) noise transformation occurs and distorts the PWM signal at the input of gate driver. This paper investigates the impact of high dV/dt induced noise on gate drive performance in GaN systems. Firstly, noise propagation paths and CM to DM noise transformation are analyzed, followed by simulation and Double Pulse Test (DPT) on hardware. The results show that noise distortion causes mis-triggering of the switches. Further, it is proposed that a cascaded stage comprising power supply and gate driver can suppress the noise by increasing the noise path impedance. The proposed method is verified on hardware with turn-off and turn-on dV/dt equal to 88 V/ns and 62 V/ns respectively at 400 V without mis-triggering.