Nucleation and growth of Si nanowires from silicon oxide
Nucleation and growth of Si nanowires from silicon oxide
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DOI：
10.1103/physrevb.58.r16024
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发表时间：
1998-12-15
影响因子：
3.7
通讯作者：
Lee, ST
中科院分区：
文献类型：
--
作者：
Wang, N;Tang, YH;Lee, ST
用透射电子显微镜研究了掺SiO_2的Si粉源在激光烧蚀和热蒸发过程中硅纳米线的形核和生长。在初始成核阶段，氧化硅蒸汽凝聚在衬底上，形成纳米硅颗粒(纳米线的核心)。每个Si纳米线核由一个含有高密度缺陷的多晶硅核心和一个氧化硅壳组成。根据观察到的硅纳米线的微观结构和不同的形貌，提出了一种生长机制。[S0163-1829(98)51348-3]。
Nucleation and growth of Si nanowires by laser ablation and thermal evaporation of Si powder sources mixed with SiO2 have been investigated by means of transmission electron microscopy. At the initial nucleation stage, Si oxide vapor condensed on the substrate and formed Si nanoparticles (the nuclei of nanowires). Each Si nanowire nucleus consisted of a polycrystalline Si core containing a high density of defects and a Si oxide shell. A growth mechanism was proposed based on the microstructure and different morphologies of the Si nanowires observed. [S0163-1829(98)51348-3].