Universal statistics of transport in disordered conductors.
Universal statistics of transport in disordered conductors.
复制标题
无序导体传输的普遍统计。
DOI：
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发表时间：
1994
期刊：
影响因子：
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通讯作者：
Yakovets
中科院分区：
文献类型：
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作者：
Lee;Levitov;Yakovets
在低温极限下，研究了无序导体的电子计数统计。利用准一维无序导体的随机矩阵理论的一个结果，导出了有限时间内电荷传输分布的表达式。在金属区，我们发现分布的峰是高斯分布，样品间的变化可以忽略不计。我们还发现，分布的尾部既不是高斯分布，也不是泊松分布，并表现出强烈的样本间变化。
In low temperature limit, we study electron counting statistics of a disordered conductor. We derive an expression for the distribution of charge transmitted over a finite time interval by using a result from the random matrix theory of quasi one dimensional disordered conductors. In the metallic regime, we find that the peak of the distribution is Gaussian and shows negligible sample to sample variations. We also find that the tails of the distribution are neither Gaussian nor Poisson and exhibit strong sample to sample variations.