Anisotropic magnetoresistance of ferromagnetic conductive filament in resistive switching memory
Anisotropic magnetoresistance of ferromagnetic conductive filament in resistive switching memory
复制标题
阻变存储器中铁磁导电丝的各向异性磁阻
DOI：
10.1149/06414.0029ecst
复制
发表时间：
2014
期刊：
影响因子：
--
通讯作者：
and S. Shingubara
中科院分区：
文献类型：
--
作者：
S. Otsuka;Y. Hamada;T. Shimizu;and S. Shingubara
我们报告的起源的导电丝（CF）的Ni/HfO 2/Pt电阻开关存储器。在Ni电极上施加正偏压时，器件表现出从高电阻到低电阻的SET过程。在正偏置和负偏置期间都发生电阻变化过程（从低电阻到高电阻）。我们研究了电阻和磁阻的温度依赖性的低电阻状态（LRS）的设备，这是形成与不同量的电流遵守。与用低电流顺应性形成的LRS相比，用高电流顺应性形成的LRS具有电阻的线性温度依赖性。此外，各向异性的磁电阻观察到的LRS，这是形成与高电流顺应性。这表明，CF是由铁磁Ni原子时，高电流顺应性被用来形成LRS。
We report on an origin of the conductive filament (CF) for a Ni/HfO2/Pt resistive switching memory. The device shows SET process (from high to low resistance), when positive bias is applied to the Ni electrode. RESET process (from low to high resistance) occurs during both positive and negative biases. We investigated the temperature dependence of resistance and magnetoresistance for the low resistance states (LRS) of the device, which were formed with different amount of a current compliance. LRS formed with the high current compliance has a linear temperature dependence of resistance compared with that formed with the low current compliance. Moreover, anisotropic magnetoresistance was observed for the LRS, which was formed with the high current compliance. This suggests that CF is made of the ferromagnetic Ni atoms when a high current compliance was used to form LRS.