Temperature Compensated IBAR Reference Oscillators
Temperature Compensated IBAR Reference Oscillators
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DOI：
10.1109/memsys.2006.1627948
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发表时间：
2006-05
期刊：
影响因子：
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通讯作者：
G. Ho;K. Sundaresan;S. Pourkamali;F. Ayazi
中科院分区：
文献类型：
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作者：
G. Ho;K. Sundaresan;S. Pourkamali;F. Ayazi
这项工作介绍了一种双芯片自动温度补偿微机械IBAR基准振荡器，其温度漂移在100°C以上为39ppm。温度补偿由抛物线VP校正方案提供，比以前报道的结果提高了10倍。可调谐6兆赫、10兆赫和20兆赫谐振器的特征是2000-4500ppm的调谐和高达119000的Q。从Vp=18V的测量数据中提取了低至218V的运动阻抗。温度补偿和振荡接口芯片的功耗仅为1.9 mW。测量还表明，在小于5V的情况下，具有65 nm间隙的10 MHz谐振器的温度补偿是可能的。
This work presents a two-chip automatically temperature-compensated micromechanical IBAR reference oscillator with a temperature drift of 39ppm over 100 ° C. Temperature compensation is provided by a parabolic VPcorrection scheme and provides 10X improvement over previously reported results. Tunable 6MHz, 10MHz, and 20MHz resonators were characterized with 2000– 4500ppm tuning and Q up to 119000. Motional impedances as low as 218Ω were extracted from measurement data with VP= 18V. The interface IC for temperature compensation and oscillation consumes only 1.9mW. Measurements also show that temperature compensation of a 10MHz resonator with 65nm gaps is possible with less than 5V.