Sub-wavelength grating assisted mode order converter on the SOI substrate
Sub-wavelength grating assisted mode order converter on the SOI substrate
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SOI 衬底上的亚波长光栅辅助模阶转换器
DOI：
10.1364/oe.27.034434
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发表时间：
2019-11-11
期刊：
影响因子：
3.8
通讯作者：
Ren, Xiaomin
中科院分区：
文献类型：
--
作者：
Cheng, Zhuo;Wang, Jun;Ren, Xiaomin
我们设计了三种利用绝缘体上硅衬底上的亚波长光栅实现的模阶数转换器。该模式转换器可分别实现基横电模到一阶横电模（TE 0-to-TE 1）、二阶横电模（TE 0-to-TE 2）和三阶横电模（TE 0-to-TE 3）的模式转换，器件尺寸紧凑，性能良好。模拟结果表明，在1.5 ~ 1.6 μ m波长范围内，TE 0 ~ TE 1、TE 0 ~ TE 2和TE 0 ~ TE 3的模阶转换效率分别大于94.4%、95.7%和83.7%，对应的器件长度分别为8.72 μ m、4.98 μ m和14.54 μ m。此外，模阶转换器可以只用一次刻蚀就可以制作完成，这对器件的制作是有利的。(C)根据OSA开放获取出版协议的条款，2019年美国光学学会
We have designed three mode order converters using the sub-wavelength grating on the silicon-on-insulator substrate. The proposed mode order converters can separately realize the mode order conversion from the fundamental transverse electric mode to the first-order transverse electric mode (TE0-to-TE1), the second-order transverse electric mode (TE0-to-TE2) and the third-order transverse electric mode (TE0-to-TE3) with compact device sizes and good performances. The simulation results show that the mode order conversion efficiencies of TE0 to-TE1, TE0-to-TE2 and TE0-to-TE3 are larger than 94.4%, 95.7% and 83.7% in the wavelength ranging from 1.5 mu m to 1.6 mu m, the corresponding device length are 8.72 mu m, 4.98 gm and 14.54 mu m. In addition, the mode order converter can be fabricated with only once etching which will be advantage to the device fabrication. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement