Properties of surface-pit related emission in a -plane InGaN/GaN quantum wells grown on r -plane sapphire
Properties of surface-pit related emission in a -plane InGaN/GaN quantum wells grown on r -plane sapphire
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r 面蓝宝石上生长的 a 面 InGaN/GaN 量子阱的表面凹坑相关发射特性
DOI：
10.1002/pssc.201001043
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
Badcock T
中科院分区：
文献类型：
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作者：
Badcock T
我们研究了生长在r面蓝宝石衬底上的非极性（11 - 20）In0.03Ga0.97N/GaN多量子威尔斯阱（MQW）的光学和结构特性。发射光谱的特征在于在λ 370 nm处的峰和蓝-绿色发射带（400-550 nm）。在370 nm处的近UV峰归属于位于（11 - 20）平面上的多量子阱中的载流子复合。根据显微镜和阴极发光成像，较长的波长带归因于在较低温度和氮气气氛中的高NH3流量下MQW生长期间形成的结构缺陷的各个半极性面上形成的侧壁MQW的发射。该谱带的谱宽被认为源于单个侧壁QW内的电子无序以及在不同半极性面上形成的QW的结构性质之间的变化（© 2011 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）。
We have investigated the optical and structural properties of non‐polar (11‐20) In0.03Ga0.97N/GaN multiple quantum wells (MQWs) grown on r‐plane sapphire substrates. The emission spectrum is characterised by a peak at ∼370 nm and a blue‐green emission band (400–550 nm). The near‐UV peak at 370 nm is assigned to carrier recombination in the MQWs lying on the (11‐20) plane. On the basis of microscopy and cathodoluminescence imaging, the longer wavelength band is attributed to emission from sidewall MQWs formed on the various semi‐polar facets of structural defects which form during MQW growth at the lower temperatures and high NH3 flow in a nitrogen atmosphere. The spectral width of this band is proposed to originate from electronic disorder within individual sidewall QWs and variations between the structural properties of QWs formed on different semi‐polar facets (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)