Competitive conductive mechanism of interstitial Ag and oxygen vacancies in Ag/Ta2O5/Pt stack
Competitive conductive mechanism of interstitial Ag and oxygen vacancies in Ag/Ta2O5/Pt stack
复制标题
Ag/Ta2O5/Pt 叠层中间隙 Ag 和氧空位的竞争导电机制
DOI:
10.1063/1.5109267
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发表时间:
2019
影响因子:
3.2
通讯作者:
Chu Paul K
中科院分区:
文献类型:
--
作者:
Hu Qi;Fan Zhiqiang;Huang Anping;Zhang Xinjiang;Zhao Rumeng;Gao Qin;Ji Yuhang;Dou Wenzhen;Wang Mei;Shi Hongliang;Xiao Zhisong;Jiang Xiangwei;Chu Paul K
The transport properties of Ag/Ta2O5/Pt with coexisting interstitial Ag and oxygen vacancies are examined by density-functional theory.and nonequilibrium Green’s function calculation. The results show that the coexistence of interstitial Ag and oxygen vacancies results in a.reduced transmission coefficient, implying an antagonistic interaction between Ag and oxygen vacancies. Interstitial Ag atoms may take the.position of oxygen vacancies and block the oxygen vacancy channel. Alternatively, oxygen vacancies attract electrons from nearby Ag channels.thereby reducing the conductance. By comparing the different dual-component channels, it is found that Ag and oxygen vacancies tend.to form a complete oxygen vacancy channel with a few Ag atoms giving rise to higher conductance. Our calculation reveals a competitive.conductive mechanism of interstitial Ag and oxygen vacancies and a promising strategy to investigate multicomponent channels and.improve the design of future synaptic devices.