Thermal resistance and temperature characteristics of GaAs/Al0.33Ga0.67As quantum-cascade lasers
Thermal resistance and temperature characteristics of GaAs/Al0.33Ga0.67As quantum-cascade lasers
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DOI：
10.1063/1.1351850
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发表时间：
2001-02
影响因子：
4
通讯作者：
V. Spagnolo;M. Troccoli;G. Scamarcio;C. Becker;G. Glastre;C. Sirtori
中科院分区：
文献类型：
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作者：
V. Spagnolo;M. Troccoli;G. Scamarcio;C. Becker;G. Glastre;C. Sirtori
我们报告了使用微探针带间光致发光技术测定在脉冲模式下工作的 GaAs/Al0.33Ga0.67As 量子级联激光器的热阻、端面温度分布和热通量。外延层侧安装激光器的热阻比基板侧安装激光器的热阻小约 30%。还报告了热阻对注入条件的依赖性及其与输出功率的相关性。
We report on the determination of thermal resistance, facet temperature profile, and heat flux of GaAs/Al0.33Ga0.67As quantum-cascade lasers operating in pulsed mode, using a microprobe band-to-band photoluminescence technique. The thermal resistance of epilayer-side mounted lasers is ∼30% smaller than that of substrate-side mounted ones. The dependence of the thermal resistance on the injection conditions and its correlation with the output power is also reported.