LATERAL POSITION CONTROL OF AN ELECTRON CHANNEL IN A SPLIT-GATE DEVICE
LATERAL POSITION CONTROL OF AN ELECTRON CHANNEL IN A SPLIT-GATE DEVICE
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DOI：
10.1088/0268-1242/6/1/006
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发表时间：
1991-01-01
影响因子：
1.9
通讯作者：
LARKIN, IA
中科院分区：
文献类型：
--
作者：
GLAZMAN, LI;LARKIN, IA
从理论上研究了一种采用分闸装置的新型工作方式。提出了一个简单的定量描述截断电压和通道位置的模型。独立控制施加于分栅的断开部分的电压，使电子通道能够横向移动。计算了窄通道和宽通道的位移。该方法可用于研究栅极狭缝所限定区域内的电子散射体。
A new mode of operation with a split-gate device has been studied theoretically. A simple model for quantitative description of the pinch-off voltage and channel position is proposed. Independent control of voltages applied to disconnected parts of a split gate enables the electron channel to be shifted laterally. The shift was calculated for both narrow and wide channels. The method can be used to study electron scatterers in the area defined by the slit in the gate.