Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy
Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy
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固源硅分子束外延生长的应变 SiGe/Si 量子阱结构的电致发光
DOI：
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发表时间：
1992
期刊：
影响因子：
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通讯作者：
K. Nakagawa
中科院分区：
文献类型：
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作者：
S. Fukatsu;N. Usami;T. Chinzei;Y. Shiraki;A. Nishida;K. Nakagawa
首次报道了固体源Si分子束外延生长的Si_（0.8）Ge_（0.2）/Si量子阱结构的电致发光。光谱轮廓主要由SiGe量子阱发射、由于SiGe合金无序化而引起的无声子（NP）跃迁及其横向光学（TO）声子副本。从27 ~ 120 K观察到电致发光。发现积分强度随注入电流的增加而线性增加。量子化状态的空穴减少是导致EL光谱在较高温度下变化的原因。
Electroluminescence (EL) is reported for Si0.8Ge0.2/Si quantum well (QW) structures grown by “solid source” Si molecular beam epitaxy for the first time. The spectral profile was dominated by SiGe quantum well emissions, no-phonon (NP) transitions due to symmetry-breaking SiGe alloy disordering and its transverse optical (TO) phonon replica. EL was observed from 27 up to 120 K. The integrated intensity was found to linearly increase with increasing injection current. Hole depopulation out of the quantized state was responsible for EL spectral variation at higher temperatures.