A method to determine the gate bias-dependent and gate bias-independent components of MOSFET series resistance from S-parameters
A method to determine the gate bias-dependent and gate bias-independent components of MOSFET series resistance from S-parameters
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DOI：
10.1109/ted.2006.870328
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发表时间：
2006-02
影响因子：
3.1
通讯作者：
E. Torres-Rios;R. Torres‐Torres;G. Valdovinos-Fierro;E. Gutiérrez-D.
中科院分区：
文献类型：
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作者：
E. Torres-Rios;R. Torres‐Torres;G. Valdovinos-Fierro;E. Gutiérrez-D.
提出了一种基于s参数测量的方法，用于提取MOSFET串联电阻中与偏置相关和与偏置无关的分量。建议的程序允许从单个设备上执行的测量中直接和分析地确定这些成分。在0.18-/spl mu/m沟道长度的MOSFET上，仿真数据与实验数据吻合良好，验证了该方法的有效性。
An S-parameter measurement-based procedure for the extraction of the bias dependent and bias independent components of the MOSFET series resistance is presented. The proposed procedure allows the direct and analytical determination of these components from measurements performed on a single device. The method is verified by achieving good agreement between simulated and experimental data for a 0.18-/spl mu/m channel-length MOSFET.