Dislocation Processes in Plastic Flow of Crystals
Dislocation Processes in Plastic Flow of Crystals
复制标题
晶体塑性流动中的位错过程
DOI：
10.2465/gkk1952.19.141
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发表时间：
1990
期刊：
影响因子：
--
通讯作者：
K. Sumino
中科院分区：
文献类型：
--
作者：
K. Sumino
本文评述了如何用微观位错的动力学过程来理解宏观尺度上观察到的晶体塑性流动的特性，并对各种位错过程进行了定量的理论处理，这些位错过程在确定硅晶体的变形特性方面起着重要作用。根据实验观测得到的位错动力学特性，从理论上导出了应力-应变曲线与温度、应变速率和晶体中位错密度的函数关系。结果表明，理论推导的应力-应变行为与实验观察到的应力-应变行为之间有很好的一致性。
A review is given of how the characteristics in plastic flow of a crystal observed on a macroscopic scale are understood in terms of dynamic processes of dislocations which take place on a microscopic scale inside it. Theoretical treatments are developed quantitatively for various dislocation processes which play important roles in determining the deformation characteristics in the case of a silicon crystal. The stressstrain curve is derived theoretically as a function of temperature, strain-rate and density of dislocations initially included in the crystal on the basis of dynamic characteristics of dislocations which have been clarified by experimental observations. It is demonstrated that a good agreement is obtained between theoretically derived stress-strain behavior and experimentally observed one.