Rectification of ionic current in a nanofluidic diode
Rectification of ionic current in a nanofluidic diode
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DOI：
10.1021/nl062806o
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发表时间：
2007-03-01
期刊：
影响因子：
10.8
通讯作者：
Majumdar, Arun
中科院分区：
文献类型：
--
作者：
Karnik, Rohit;Duan, Chuanhua;Majumdar, Arun
我们证明了整流的离子输运在纳米流体二极管制造通过引入表面电荷不连续的纳米流体通道。器件的电流-电压（I-V）特性在中等到高离子浓度下与一维模型定性一致。这项研究说明了离子流控制使用表面电荷图案化在高偏压下的纳米流体通道。
We demonstrate rectification of ionic transport in a nanofluidic diode fabricated by introducing a surface charge discontinuity in a nanofluidic channel. Device current-voltage (I-V) characteristics agree qualitatively with a one-dimensional model at moderate to high ionic concentrations. This study illustrates ionic flow control using surface charge patterning in nanofluidic channels under high bias voltages.