Facet dependence of leakage current and carrier concentration in m‐plane GaN Schottky barrier diode fabricated with MOVPE
Facet dependence of leakage current and carrier concentration in m‐plane GaN Schottky barrier diode fabricated with MOVPE
复制标题
MOVPE 制造的 m 面 GaN 肖特基势垒二极管中漏电流和载流子浓度的面依赖性
DOI：
10.1002/pssa.201600829
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
H. Amano
中科院分区：
文献类型：
--
作者：
A. Tanaka;Ousmane I Barry;K. Nagamatsu;J. Matsushita;M. Deki;Y. Ando;M. Kushimoto;S. Nitta;Y. Honda;H. Amano
In this study, GaN m‐plane Schottky barrier diodes fabricated with a metalorganic vapor‐phase epitaxy on a GaN substrate were investigated using emission microscope, photoluminescence, and cathodoluminescence. In addition, facet dependence of leakage current under reverse‐biased condition was observed. We showed that the leakage‐current distribution was caused by the facet dependence of the carrier concentration and oxygen concentration. These results can provide important suggestions for the fabrication of m‐plane devices.
