High precision dynamic alignment and gap control for optical near-field nanolithography
High precision dynamic alignment and gap control for optical near-field nanolithography
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DOI：
10.1116/1.4809519
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发表时间：
2013-06
影响因子：
1.4
通讯作者：
Xiaolei Wen;Luis M. Traverso;P. Srisungsitthisunti;Xianfan Xu;E. Moon
中科院分区：
文献类型：
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作者：
Xiaolei Wen;Luis M. Traverso;P. Srisungsitthisunti;Xianfan Xu;E. Moon
作者演示了使用干涉空间相位成像（ISPI）来控制平行光学近场纳米光刻的纳米量级的间隙距离。在光学近场纳米光刻技术中，掩模与衬底之间的距离需要控制在几十纳米以内，ISPI技术利用掩模上制作的棋盘格光栅产生干涉条纹，用来确定掩模与衬底表面之间的差距距离。该技术的灵敏度可达0.15nm。利用ISPI和动态反馈控制系统，实现了掩模与衬底的精确对准，并使差距变化小于6 nm，实现了平行纳米光刻。
The authors demonstrate the use of interferometric-spatial-phase-imaging (ISPI) to control a gap distance of the order of nanometers for parallel optical near-field nanolithography. In optical near-field nanolithography, the distance between the optical mask and the substrate needs to be controlled within tens of nanometers or less. The ISPI technique creates interference fringes from checkerboard gratings fabricated on the optical mask, which are used to determine the gap distance between the mask and the substrate surfaces. The sensitive of this gapping technique can reach 0.15 nm. With the use of ISPI and a dynamic feedback control system, the authors can precisely align the mask and the substrate and keep variation of the gap distance below 6 nm to realize parallel nanolithography.