Theoretical analysis and modelling of degradation for III-V lasers on Si
Theoretical analysis and modelling of degradation for III-V lasers on Si
复制标题
Si 上 III-V 激光器退化的理论分析和建模
DOI：
10.1088/1361-6463/ac83d3
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
Liu J
中科院分区：
文献类型：
--
作者：
Liu J
InAs/GaAs量子点（QD）激光器为实现硅基片上光源提供了一种有前途的方法。然而，III-V材料在Si上的单片集成引入了高密度的螺纹位错（td），这限制了这种激光器件在器件寿命方面的性能。在此，我们提出了一个包含退化项和饱和项的动力学模型来模拟激光运行初期由TDs引起的退化过程。利用速率方程模型，计算了TDs集中的润湿层中的电流密度。我们通过改变动力学模型中计算电流密度的拟合参数，比较了不同腔长的QD激光器和直接生长在Si衬底上的量子阱激光器的降解率。
InAs/GaAs quantum-dot (QD) lasers offer a promising method to realise Si-based on-chip light sources. However, the monolithic integration of III–V materials on Si introduces a high density of threading dislocations (TDs), which limits the performance of such a laser device in terms of device lifetime. Here, we proposed a kinetic model including a degradation term and a saturation term to simulate the degradation process caused by the TDs in the early stage of laser operation. By using a rate equation model, the current density in the wetting layer, where the TDs concentrate, is calculated. We compared the rate of degradation of QD lasers with different cavity lengths and of quantum-well lasers, where both are directly grown on Si substrates, by varying the fitting parameters in the calculation of current densities in the kinetic model.