Marked enhancement of 320-360 nm ultraviolet emission in quaternary InxAlyGa1-x-yN with In-segregation effect
Marked enhancement of 320-360 nm ultraviolet emission in quaternary InxAlyGa1-x-yN with In-segregation effect
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DOI：
10.1063/1.1433162
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发表时间：
2002-01-14
影响因子：
4
通讯作者：
Aoyagi, Y
中科院分区：
文献类型：
--
作者：
Hirayama, H;Kinoshita, A;Aoyagi, Y
我们展示了室温（RT）强紫外（UV）发射的波长范围为315-370 nm的四元InxAlyGa 1-x-yN合金生长的金属有机气相外延。我们发现，在AlGaN中引入2%-5%的In时，由于In的偏析效应，其紫外发射显著增强。当采用较高的生长温度（830-850 ℃）时，In在四元InxAlyGa 1-x-yN中的掺入随着Al含量的增加而显著增强，从而产生有效的RT UV发射。制备的四元InxAlyGa 1-x-yN（x=2.0%-4.8%，y =12%-34%）在330-360 nm处获得了最大效率发射。四元In0.034Al0.12Ga0.85N的330 nm发射强度与室温下In0.22Ga0.78N的430 nm发射强度一样强。我们从四元InAlGaN薄膜的阴极发光图像中清楚地观察到亚微米尺寸的In偏析。(C)2002年美国物理学会。
We demonstrated room-temperature (RT) intense ultraviolet (UV) emission in the wavelength range of 315-370 nm from quaternary InxAlyGa1-x-yN alloys grown by metalorganic vapor-phase epitaxy. We found that the UV emission is considerably enhanced by the In-segregation effect upon introducing 2%-5% of In into AlGaN. The In incorporation in quaternary InxAlyGa1-x-yN is markedly enhanced with the increase of Al content when using a relatively high growth temperature (830-850 degreesC), resulting in efficient RT UV emission. Maximally efficient emission was obtained at around 330-360 nm from the fabricated quaternary InxAlyGa1-x-yN (x=2.0%-4.8%,y=12%-34%). The intensity of the 330 nm emission from quaternary In0.034Al0.12Ga0.85N was as strong as that of the 430 nm emission from In0.22Ga0.78N at RT. We clearly observed In segregation of submicron size from cathode luminescence images of quaternary InAlGaN films. (C) 2002 American Institute of Physics.