High-Electron-Mobility Ge/GeO2 n-MOSFETs With Two-Step Oxidation
High-Electron-Mobility Ge/GeO2 n-MOSFETs With Two-Step Oxidation
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DOI：
10.1109/ted.2011.2111373
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发表时间：
2011-05-01
影响因子：
3.1
通讯作者：
Toriumi, Akira
中科院分区：
文献类型：
--
作者：
Lee, Choong Hyun;Nishimura, Tomonori;Toriumi, Akira
我们提出了一个两步氧化与高压氧化和低温氧退火，形成理想的Ge/GeO 2堆叠的基础上热力学和动力学控制。经过两步氧化的Ge/GeO 2 MISCAP的电容-电压（C-V）特性表明，其电学性能得到了显着改善，并且用低温电导法估计的界面态密度（D-it）低于1011 eV（-1）cm（-2）靠近中间带隙。在我们对Ge氧化的理解的基础上，我们证明了Ge n沟道金属氧化物半导体场效应晶体管（MOSFET）中非常高的电子迁移率，超过了Si MOSFET中的通用迁移率。两步氧化的Ge n-MOSFET的峰值电子迁移率为1100 cm（2）/V。s在Al/GeO 2/Ge叠层中。这是通过处理Ge/GeO 2通道接口来实现的。由于我们澄清了迁移率仍然受到剩余的非本征散射源的限制，因此目前的结果有望实现更高性能的Ge互补金属氧化物半导体。
We propose a two-step oxidation with high-pressure oxidation and low-temperature oxygen annealing to form ideal Ge/GeO2 stacks based on thermodynamic and kinetic control. The capacitance-voltage (C-V) characteristics of Ge/GeO2 MISCAPs with two-step oxidation revealed significant improvements of electrical properties, and the interface states density (D-it) estimated with a low-temperature conductance method that was below 1011 eV(-1)cm(-2) near the midgap. On the basis of our understanding of Ge oxidation, we demonstrated very high electron mobility in Ge n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) that exceeded the universal mobility in Si-MOSFETs. The peak electron mobility in Ge n-MOSFETs with the two-step oxidation was 1100 cm(2)/V . s in the Al/GeO2/Ge stack. This was achieved by taking care of the Ge/GeO2 channel interface. Since we clarified that mobility was still limited by the remaining extrinsic scattering sources, the present results promise much higher performance Ge complementary metal-oxide-semiconductor.