Quantification of interfacial spin-charge conversion in hybrid devices with a metal/insulator interface
Quantification of interfacial spin-charge conversion in hybrid devices with a metal/insulator interface
复制标题
具有金属/绝缘体界面的混合器件中界面自旋电荷转换的量化
DOI:
10.1063/5.0023992
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发表时间:
2020
影响因子:
4
通讯作者:
F. Bergeret
中科院分区:
文献类型:
--
作者:
C. Sanz;V. T. Pham;E. Sagasta;L. Hueso;I. Tokatly;F. Casanova;F. Bergeret
We present and experimentally verify a universal theoretical framework for the description of spin-charge interconversion in non-magnetic metal/insulator structures with interfacial spin–orbit coupling (ISOC). Our formulation is based on drift-diffusion equations supplemented with generalized boundary conditions. The latter encode the effects of ISOC and relate the electronic transport in such systems to spin loss and spin-charge interconversion at the interface. We demonstrate that the conversion efficiency depends solely on these interfacial parameters. We apply our formalism to two typical spintronic devices that exploit ISOC: a lateral spin valve and a multilayer Hall bar, for which we calculate the non-local resistance and the spin Hall magnetoresistance, respectively. Finally, we perform measurements on these two devices with a BiOx/Cu interface and verify that transport properties related to the ISOC are quantified by the same set of interfacial parameters.
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影响因子:
4
作者:
N. Vlietstra;J. Shan;Vincent Castel;J. Youssef;Gerrit E. W. Bauer;Gerrit E. W. Bauer;V. Wees
通讯作者:
N. Vlietstra;J. Shan;Vincent Castel;J. Youssef;Gerrit E. W. Bauer;Gerrit E. W. Bauer;V. Wees
影响因子:
44.1
作者:
Sinova, Jairo;Valenzuela, Sergio O.;Jungwirth, T.
通讯作者:
Jungwirth, T.
影响因子:
3.7
作者:
Chen, Yan-Ting;Takahashi, Saburo;Bauer, Gerrit E. W.
通讯作者:
Bauer, Gerrit E. W.
影响因子:
3.7
作者:
Cornelissen, L. J.;Peters, K. J. H.;van Wees, B. J.
通讯作者:
van Wees, B. J.