Quantification of interfacial spin-charge conversion in hybrid devices with a metal/insulator interface

Quantification of interfacial spin-charge conversion in hybrid devices with a metal/insulator interface
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具有金属/绝缘体界面的混合器件中界面自旋电荷转换的量化

DOI:
10.1063/5.0023992
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发表时间:
2020
影响因子:
4
通讯作者:
F. Bergeret
F. Bergeret
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
C. Sanz;V. T. Pham;E. Sagasta;L. Hueso;I. Tokatly;F. Casanova;F. Bergeret

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我们提出并实验验证了一个通用的理论框架,用于描述非磁性金属/绝缘体结构与界面自旋轨道耦合(ISOC)的自旋-电荷相互转换。我们的配方是基于漂移扩散方程补充广义边界条件。后者编码的ISOC的影响,并在这样的系统中的电子输运的自旋损耗和自旋-电荷相互转换的接口。我们证明,转换效率仅取决于这些界面参数。我们将我们的形式主义,利用ISOC两个典型的自旋电子器件:横向自旋阀和多层霍尔酒吧,我们分别计算的非本地电阻和自旋霍尔磁阻。最后,我们对这两个设备进行测量与BiOx/Cu接口,并验证相关的ISOC的传输性能的量化由相同的一组界面参数。
We present and experimentally verify a universal theoretical framework for the description of spin-charge interconversion in non-magnetic metal/insulator structures with interfacial spin–orbit coupling (ISOC). Our formulation is based on drift-diffusion equations supplemented with generalized boundary conditions. The latter encode the effects of ISOC and relate the electronic transport in such systems to spin loss and spin-charge interconversion at the interface. We demonstrate that the conversion efficiency depends solely on these interfacial parameters. We apply our formalism to two typical spintronic devices that exploit ISOC: a lateral spin valve and a multilayer Hall bar, for which we calculate the non-local resistance and the spin Hall magnetoresistance, respectively. Finally, we perform measurements on these two devices with a BiOx/Cu interface and verify that transport properties related to the ISOC are quantified by the same set of interfacial parameters.
DOI: 10.1063/1.4813760
发表时间: 2013-05
影响因子: 4
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