PIEZO-ELECTROREFLECTANCE IN GE GAAS AND SI
PIEZO-ELECTROREFLECTANCE IN GE GAAS AND SI
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DOI:
10.1103/physrev.172.816
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发表时间:
1968-01-01
期刊:
影响因子:
--
通讯作者:
CARDONA, M
中科院分区:
文献类型:
--
作者:
POLLAK, FH;CARDONA, M
We have investigated the effect of static uniaxial compression along the [001],[110], and [111] directions on the E 0, E 0+ Δ 0, E 1, and E 1+ Δ 1 electroreflectance peaks of Ge and GaAs, and the E 0′ electroreflectance peaks of Si. From the stress-induced splittings and shifts of the E 0, E 0+ Δ 0 peaks of Ge and GaAs, the hydrostatic and shear deformation potentials of the k= 0 valence-band maximum have been determined. We have also observed a nonlinear stress dependence of the energies of these peaks, which is caused by the stress-induced coupling between the upper stress-split valence band and the spin-orbit split band. A theory for the stress-induced variations in intensity caused by this interaction will be presented and compared with the experimental results. The hydrostatic and shear deformation potentials of the Λ 1-conduction and Λ 3-valence bands of Ge and GaAs have been determined from the stress dependence of the E 1 and E 1+ Δ 1 peaks of these materials. We have attributed the observed stress-induced changes in intensity of these peaks to the intraband splitting of the Λ 3-orbital valence bands. The experimental results are compared with our theoretical calculations. The stress dependence of the E 0′ electroreflectance peaks of Si for [001] stress seems to indicate that [100] critical points are responsible for this structure. However, we have also observed large polarization-dependent intensity changes for [111] stress, which we have not been able to explain on the basis of the above assignment.