Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN
Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN
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DOI：
10.1063/1.4901938
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发表时间：
2014-11-10
影响因子：
4
通讯作者：
Yamamoto, Hideki
中科院分区：
文献类型：
--
作者：
Hiroki, Masanobu;Kumakura, Kazuhide;Yamamoto, Hideki
我们在h-BN/蓝宝石衬底上制作了AlGaN/GaN高电子迁移率晶体管（HEMT），并使用h-BN作为释放层将它们从主衬底转移到铜板上。在电流-电压特性中，在高偏压条件下，饱和漏电流在自热效应释放之前下降约30%。相比之下，在转移后，由于改善了散热，电流衰减小至8%：在所制备的HEMT中，器件温度升高至50摄氏度，但在转移的HEMT中仅升高几度。提出了一种通过抑制自热效应来提高AlGaN/GaN HEMT性能的有效方法。(C)2014 AIP Publishing LLC.
We fabricated AlGaN/GaN high electron mobility transistors (HEMTs) on h-BN/sapphire substrates and transferred them from the host substrates to copper plates using h-BN as a release layer. In current-voltage characteristics, the saturation drain current decreased by about 30% under a high-bias condition before release by self-heating effect. In contrast, after transfer, the current decrement was as small as 8% owing to improved heat dissipation: the device temperature increased to 50 degrees C in the as-prepared HEMT, but only by several degrees in the transferred HEMT. An effective way to improve AlGaN/GaN HEMT performance by a suppression of self-heating effect has been demonstrated. (C) 2014 AIP Publishing LLC.