Desities of Amorphous Thin Films
Desities of Amorphous Thin Films
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DOI：
10.1143/jjap.18.1931
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发表时间：
1979-10
影响因子：
1.5
通讯作者：
M. Shiojiri;Yoshio Saito;H. Okada;Hiromi Sasaki
中科院分区：
文献类型：
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作者：
M. Shiojiri;Yoshio Saito;H. Okada;Hiromi Sasaki
采用多光束干涉仪结合振荡晶体微天平测量了真空蒸发制备的非晶 Ge、C、SiO、Se 和 WO3 薄膜的密度。光学抛光的石英晶体被用作微天平传感元件和干涉测量的基板。发现薄膜密度与厚度无关。测量结果表明，非晶薄膜密度比结晶体密度低 23-31%，比非晶或玻璃体密度低 13-14%。这种密度降低可能归因于空隙，空隙的存在是从最近的高分辨率电子显微镜观察证实的非晶结构的微晶模型推断出来的。
The densities of amorphous Ge, C, SiO, Se, and WO3 films prepared by vacuum-evaporation were measured using multiple beam interferometry in combination with an oscillating crystal microbalance. Optically polished quartz crystals were used as both the microbalance sensing elements and the substrates for interferometry. The film densities were found to be independent of thickness. The measurements indicated that the amorphous film densities were 23–31% less than the crystalline bulk densities and 13–14% less than the amorphous or vitreous bulk densities. This density decrease may be attributed to voids, the presence of which is deduced from a microcrystalline model of the amorphous structure confirmed by recent high-resolution electron microscopic observation.