Sub-second photonic processing of solution-deposited single layer and heterojunction metal oxide thin-film transistors using a high-power xenon flash lamp
Sub-second photonic processing of solution-deposited single layer and heterojunction metal oxide thin-film transistors using a high-power xenon flash lamp
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DOI：
10.1039/c7tc03721j
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发表时间：
2017-11
影响因子：
6.4
通讯作者：
K. Tetzner;Yen‐Hung Lin;A. Regoutz;A. Seitkhan;D. Payne;T. Anthopoulos
中科院分区：
文献类型：
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作者：
K. Tetzner;Yen‐Hung Lin;A. Regoutz;A. Seitkhan;D. Payne;T. Anthopoulos
我们报告的解决方案处理的In 2 O3和In 2 O3/ZnO异质结薄膜晶体管（TFT）的前体材料被转换到其半导体状态，使用高功率的光脉冲产生的氙气闪光灯的制造。在玻璃衬底上制备的In 2 O3 TFT表现出低电压操作（≤2 V）和高达1.6 cm 2 V−1 s−1的高电子迁移率。通过用光子处理的In 2 O3/ZnO异质结代替In 2 O3层，我们能够将电子迁移率提高到36 cm 2 V−1 s−1，同时保持低电压操作。尽管这些器件实现的性能水平与通过在250 °C下热退火1小时制造的对照TFT相当，但这里采用的光子处理方法非常快速，每层的处理时间小于18秒。借助数值模型，我们能够分析金属氧化物层在闪光时的温度分布，揭示出该层的表面温度在1001 ms内显著升高至1000 °C。尽管如此，玻璃基板的背面保持不变，接近室温。我们的研究结果突出了该方法的适用性，用于在廉价的大面积衬底上轻松制造高性能金属氧化物晶体管。
We report the fabrication of solution-processed In2O3 and In2O3/ZnO heterojunction thin-film transistors (TFTs) where the precursor materials were converted to their semiconducting state using high power light pulses generated by a xenon flash lamp. In2O3 TFTs prepared on glass substrates exhibited low-voltage operation (≤2 V) and a high electron mobility of ∼6 cm2 V−1 s−1. By replacing the In2O3 layer with a photonically processed In2O3/ZnO heterojunction, we were able to increase the electron mobility to 36 cm2 V−1 s−1, while maintaining the low-voltage operation. Although the level of performance achieved in these devices is comparable to control TFTs fabricated via thermal annealing at 250 °C for 1 h, the photonic treatment approach adopted here is extremely rapid with a processing time of less than 18 s per layer. With the aid of a numerical model we were able to analyse the temperature profile within the metal oxide layer(s) upon flashing revealing a remarkable increase of the layer's surface temperature to ∼1000 °C within ∼1 ms. Despite this, the backside of the glass substrate remains unchanged and close to room temperature. Our results highlight the applicability of the method for the facile manufacturing of high performance metal oxide transistors on inexpensive large-area substrates.