Controlling Schottky energy barriers in organic electronic devices using self-assembled monolayers
Controlling Schottky energy barriers in organic electronic devices using self-assembled monolayers
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DOI：
10.1103/physrevb.54.r14321
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发表时间：
1996-11-15
影响因子：
3.7
通讯作者：
Ferraris, JP
中科院分区：
文献类型：
--
作者：
Campbell, IH;Rubin, S;Ferraris, JP
我们展示了利用化学定制的电极在有机电子器件中的肖特基势垒的调谐。通过在器件制造之前使用自组装单层（SAM）将定向偶极层附着到Ag上，将Ag在聚[2-甲氧基，5-（2 '-乙基-己氧基）-1，4-亚苯基]上的肖特基能垒在大于1 eV的范围内调谐。开尔文探针测量用于确定SAM对Ag表面电位的影响。分子偶极矩的从头算Hartree-Fock计算成功地描述了表面势的变化。化学定制的电极，然后纳入有机二极管结构和金属/有机肖特基势垒的变化进行了测量，使用电吸收技术。这些结果表明使用自组装单分子膜来控制金属/有机界面的电子性质。他们建立了操纵两种材料之间相对能级的物理原理，并展示了改善有机电子器件中金属/有机接触的方法。
We demonstrate tuning of Schottky energy barriers in organic electronic devices by utilizing chemically tailored electrodes. The Schottky energy barrier of Ag on poly[2-methoxy, 5-(2'-ethyl-hexyloxy)-1,4-phenylene was tuned over a range of more than 1 eV by using self-assembled monolayers (SAM's) to attach oriented dipole layers to the Ag prior to device fabrication. Kelvin probe measurements were used to determine the effect of the SAM's on the Ag surface potential. Ab initio Hartree-Fock calculations of the molecular dipole moments successfully describe the surface potential changes. The chemically tailored electrodes were then incorporated in organic diode structures and changes in the metal/organic Schottky energy barriers were measured using an electroabsorption technique. These results demonstrate the use of self-assembled monolayers to control metal/organic interfacial electronic properties. They establish a physical principle for manipulating the relative energy levels between two materials and demonstrate an approach to improve metal/organic contacts in organic electronic devices.