Design considerations for thin film coated semiconductor thermal neutron detectors - I: basics regarding alpha particle emitting neutron reactive films
Design considerations for thin film coated semiconductor thermal neutron detectors - I: basics regarding alpha particle emitting neutron reactive films
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DOI：
10.1016/s0168-9002(02)02078-8
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发表时间：
2003-03-11
影响因子：
1.4
通讯作者：
Klann, RT
中科院分区：
文献类型：
--
作者：
McGregor, DS;Hammig, MD;Klann, RT
基于半导体的热中子探测器为中子探测和成像提供了紧凑的技术。这种装置可以通过在超导带电粒子探测器的外部涂上中子反应膜来制造，中子反应膜可以将自由中子转化为带电粒子反应产物。用于这种器件的常用膜利用B-10（n，α）（7）Li反应或Li-6（n，α）H-3反应，由于赋予反应产物相对高的能量，这些反应是有吸引力的。不幸的是，薄膜或“箔”型热中子探测器遭受自吸收效应，这最终限制了中子探测效率。最大限度地提高这种设备的效率和性能的设计考虑进行了讨论。理论和实验结果，从正面涂层，背面涂层，和“三明治”的设计。(C)2002 Elsevier Science B. V.保留所有权利。
Semiconductor-based thermal neutron detectors provide a compact technology for neutron detection and imaging. Such devices can be produced by externally coating semiconductor-charged-particle detectors with neutron reactive films that convert free neutrons into charged-particle reaction products. Commonly used films for such devices utilize the B-10(n,alpha)(7) Li reaction or the Li-6(n,alpha)H-3 reaction, which are attractive due to the relatively high energies imparted to the reaction products. Unfortunately, thin film or "foil" type thermal neutron detectors suffer from self-absorption effects that ultimately limit neutron detection efficiency. Design considerations that maximize the efficiency and performance of such devices are discussed. Theoretical and experimental results from front coated, back coated, and "sandwich" designs are presented. (C) 2002 Elsevier Science B.V. All rights reserved.