A novel high-sensitive Pd/InP hydrogen sensor fabricated by electroless plating
A novel high-sensitive Pd/InP hydrogen sensor fabricated by electroless plating
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DOI：
10.1016/s0925-4005(02)00044-8
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发表时间：
2002-06-20
影响因子：
8.4
通讯作者：
Chu, CY
中科院分区：
文献类型：
--
作者：
Chen, HI;Chou, YI;Chu, CY
本文提出了一种新型的化学镀技术制备高灵敏度的Pd/InP肖特基二极管氢传感器。研究了空气中氢浓度为15- 10，000 ppm时的肖特基电流-电压（I-V）特性。实验结果表明，采用化学镀方法制备的传感器器件的肖特基二极管特性上级传统的热蒸发方法。此外，由于低能量制造，可以避免费米能级钉扎效应，因此，传感器器件对氢表现出高灵敏度。即使在15 ppm的非常低的氢浓度下，饱和灵敏度也达到约2.07。进一步分析I-V数据表明，实验结果与氢吸附模型吻合较好。(C)2002 Elsevier Science B. V.保留所有权利。
In this work, a novel electroless plating technique was proposed to fabricate high-sensitive Pd/InP Schottky diode hydrogen sensors. The Schottky current-voltage (I-V characteristics were investigated at hydrogen concentrations in air ranging from 15-10,000 ppm. Experimental results show that the Schottky diode characteristics for the sensor devices obtained by electroless plating are superior to those obtained by the conventional thermal evaporation. Furthermore, due to the low-energy fabrication, the Fermi-level pinning effect can be avoided and therefore, the sensor device exhibits high sensitivity on hydrogen. Even at very low hydrogen concentration of 15 ppm, the saturation sensitivity reaches about 2.07. Further analyzing the I-V data, it shows that the experimental results are in a good agreement with the proposed hydrogen adsorption model. (C) 2002 Elsevier Science B.V. All rights reserved.