Influence of disorder on incoherent transport near the Mott transition
Influence of disorder on incoherent transport near the Mott transition
复制标题
无序对莫特跃迁附近不相干输运的影响
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
K. Haule
中科院分区：
文献类型：
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作者：
M. Radonjić;D. Tanasković;V. Dobrosavljević;K. Haule
我们计算了半填充无序Hubbard模型在Mott金属-绝缘体跃迁附近的光学和直流电导率。与清洁情况一样，较大的金属电阻率是由强烈的非弹性散射驱动的，即使在电阻率远远超过半经典Mott-Ioffe-Regel极限的温度下，光学电导率中的德鲁德峰仍然存在。局域随机势不会引入新的载流子，但会诱导有效的局域载流子掺杂，使带宽变宽。这使得该体系更具金属性，与最近x射线辐照电荷转移盐的实验一致。
We calculate the optical and dc conductivity for half-filled disordered Hubbard model near the Mott metal-insulator transition. As in the clean case, large metallic resistivity is driven by a strong inelastic scattering, and Drude-like peak in the optical conductivity persists even at temperatures when the resistivity is well beyond the semiclassical Mott-Ioffe-Regel limit. Local random potential does not introduce new charge carriers but it induces effective local carrier doping and broadens the bandwidth. This makes the system more metallic, in agreement with the recent experiments on x-ray irradiated charge-transfer salts.