Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots
Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots
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DOI：
10.1063/1.3623479
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发表时间：
2011-08-08
影响因子：
4
通讯作者：
Hunter, A. T.
中科院分区：
文献类型：
--
作者：
Borselli, M. G.;Eng, K.;Hunter, A. T.
我们展示了在未掺杂的Si/SiGe异质结构中制造的双量子点，依赖于双顶门控设计。电荷传感表明，我们可以可靠地耗尽这些器件到零电荷占用。测量和模拟证实了能量是由栅感应静电势决定的。泡利自旋阻滞是通过双电子组态中的双点输运观察到的，这是在Si中进行相干自旋操作的关键步骤。(C) 2011年美国物理研究所。(doi: 10.1063/1.3623479)
We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations confirm that the energetics are determined by the gate-induced electrostatic potentials. Pauli spin blockade has been observed via transport through the double dot in the two electron configuration, a critical step in performing coherent spin manipulations in Si. (C) 2011 American Institute of Physics. [doi:10.1063/1.3623479]