InP-Based Planar-Antenna-Integrated Schottky-Barrier Diode for Millimeter- and Sub-Millimeter-Wave Detection
InP-Based Planar-Antenna-Integrated Schottky-Barrier Diode for Millimeter- and Sub-Millimeter-Wave Detection
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DOI：
10.1143/jjap.47.6256
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发表时间：
2008-08-01
影响因子：
1.5
通讯作者：
Ishibashi, Tadao
中科院分区：
文献类型：
--
作者：
Ito, Hiroshi;Nakajima, Fumito;Ishibashi, Tadao
基于InP的肖特基势垒二极管(SBD)与宽带对数周期齿形天线单片集成，用于检测频率高达太赫兹(THz)的毫米波和亚毫米波。实际制作的准光学准直透镜组件在300 GHz时的灵敏度为1000V/W，在1.2THz时的灵敏度为125V/W，具有良好的线性度。利用制作的SBD模块实现了5Gbit/S数据在240 GHz载波上的近距离无线传输。
An InP-based Schottky-barrier diode (SBD) is monolithically integrated with a wideband log-periodic toothed antenna for detecting millimeter- and sub-millimeter-waves at frequencies of up to the terahertz (THz) range. A module with a quasi-optical collimation lens fabricated for practical use exhibits sensitivities of 1000 V/W at 300 GHz and 125 V/W at 1.2 THz with good linearity. Near-distance wireless transmission of 5 Gbit/s data with a 240 GHz carrier is also examined using the fabricated SBD module.