Dynamics of molecular excitons near a semiconductor surface studied by fluorescence quenching of polycrystalline tetracene on silicon
Dynamics of molecular excitons near a semiconductor surface studied by fluorescence quenching of polycrystalline tetracene on silicon
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DOI：
10.1016/j.cplett.2014.03.075
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发表时间：
2014-05-09
影响因子：
2.8
通讯作者：
Bardeen, Christopher J.
中科院分区：
文献类型：
--
作者：
Piland, Geoffrey B.;Burdett, Jonathan J.;Bardeen, Christopher J.
Tetracene是一种经历单重态分裂的分子，它以可变厚度的LiF间隔层沉积在Si上。与早期的工作一致(Hayashi等人，1983[10])，当LiF厚度接近100 nm时，四茂铁的荧光强度大大增加。这一增加部分是由于瞬时荧光衰减时间增加了30%，但主要是由于发光与硅衬底的耦合较弱。随着裸硅上四苯厚度的增加，晶体的瞬时荧光寿命减小。我们没有发现三重态能量转移到硅的证据。(C)2014爱思唯尔B.V.保留所有权利。
Tetracene, a molecule that undergoes singlet fission, is deposited on Si with variable thickness LiF spacer layers. In agreement with earlier work (Hayashi et al., 1983 [10]), the fluorescence intensity of the tetracene greatly increases as the LiF thickness approaches 100 nm. This increase is partly due to a 30% increase in the prompt fluorescence decay time but mostly results from weaker coupling of the luminescence into the Si substrate. A decrease in the prompt fluorescence lifetime is observed as the tetracene thickness is increased on bare Si. We find no evidence for triplet energy transfer to the Si. (C) 2014 Elsevier B.V. All rights reserved.