Ultra thin and ultra long SiC/SiO2 nanocables from catalytic pyrolysis of poly(dimethyl siloxane)
Ultra thin and ultra long SiC/SiO2 nanocables from catalytic pyrolysis of poly(dimethyl siloxane)
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DOI：
10.1088/0957-4484/18/48/485601
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发表时间：
2007-11
期刊：
影响因子：
3.5
通讯作者：
K. Cai;A. Zhang;J. Yin
中科院分区：
文献类型：
--
作者：
K. Cai;A. Zhang;J. Yin
SiC/SiO2 纳米电缆是通过使用二茂铁作为催化剂前驱体在 Ar 中于约 1050 °C 下热解聚（二甲基硅氧烷）来合成的。通过 X 射线衍射、扫描电子显微镜、透射电子显微镜和高分辨率电子显微镜对生长产物进行了表征。纳米电缆的长度在毫米范围内，大多数纳米电缆的直径在约5-10纳米范围内。提出了气-液-固（VLS）机制来阐明纳米电缆的生长过程。
SiC/SiO2 nanocables were synthesized by pyrolysis of poly(dimethyl siloxane) using ferrocene as a catalyst precursor at ∼1050 °C in Ar. The as-grown product was characterized by x-ray diffraction, scanning electron microscopy, transmission electron microscopy and high-resolution electron microscopy. The length of the nanocables is in the millimeter range and the diameter of most nanocables is in the range of about 5–10 nm. The vapor–liquid–solid (VLS) mechanism was proposed to elucidate the growth process of the nanocables.