Novolak Resist Removal by Laser Irradiation (532 nm) and Adhesion between Resist and Substrate
Novolak Resist Removal by Laser Irradiation (532 nm) and Adhesion between Resist and Substrate
复制标题
通过激光照射 (532 nm) 去除酚醛清漆抗蚀剂以及抗蚀剂与基材之间的粘附力
DOI：
10.1143/jjap.44.8673
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发表时间：
2005
影响因子：
1.5
通讯作者：
A. Yoshikado
中科院分区：
文献类型：
--
作者：
H. Horibe;M. Fujita;I. Nishiyama;A. Yoshikado
用脉冲Nd 3 +YAG激光的二次谐波（532 nm）照射42合金基片上的重氮萘醌/酚醛清漆抗蚀剂。除去抗蚀剂，尽管存在六甲基二硅烷（HMDS）。基板无明显损坏。相反，Si晶片上的抗蚀剂不能被完美地去除。在某些情况下，基材会受到损坏。与HMDS的抗蚀剂的剥离强度是约3倍，没有HMDS。不加HMDS的激光辐照去除的抗蚀剂的宽度是加HMDS的抗蚀剂的1.02-1.03倍。使用这种方法将有利于环境，因为不使用昂贵和有毒的化学品。
A diazonaphthoquinone/novolak resist on a 42-alloy substrate was irradiated by the second harmonic wave (532 nm) of a pulsed Nd3+YAG laser. The resist was removed, despite the existence of hexamethyldisilane (HMDS). There was no apparent damage to the substrate. In contrast, the resist on a Si wafer could not perfectly be removed. In some cases, there was damage to the substrate. The peeling strength of the resist with HMDS was about three times than that without HMDS. The width of the resist removed by laser irradiation without HMDS was 1.02–1.03 times larger than that with HMDS. The use of this process will benefit the environment, since expensive and toxic chemicals are not used.