Possibility of Determining the Graphene Doping Level Using Raman Spectra
Possibility of Determining the Graphene Doping Level Using Raman Spectra
复制标题
使用拉曼光谱确定石墨烯掺杂水平的可能性
DOI：
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发表时间：
2018
期刊：
影响因子：
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通讯作者：
S. L. Prischepa
中科院分区：
文献类型：
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作者：
N. Kovalchuk;K. A. Nigerish;M. M. Mikhalik;N. I. Kargin;I. Komissarov;S. L. Prischepa
利用拉曼光谱研究了常压下化学气相沉积法合成的甲烷石墨烯的结构，并通过各种转移和聚合物去除方法转移到SiO2/Si衬底上。研究发现，石墨烯中二维峰位置与G峰位置的关系是斜率为~2.2的线性函数，表明石墨烯中存在双轴应力。结果发现，样品中的掺杂成分发生了变化。
Raman spectroscopy was used to study the structure of graphene synthesized from methane by chemical vapor deposition at atmospheric pressure and transferred to a SiO2/Si substrate using various transfer and polymer-removal methods. It was found that the dependences of the 2D peak positions on the G peak positions of the studied samples were well-behaved linear functions with slopes of ~2.2 that suggested the existence of biaxial stress in the graphene. It was discovered that the doping in the samples changed.