THEORY OF OPTIMUM DESIGN OF REVERSE-BIASED P-N-JUNCTIONS USING RESISTIVE FIELD PLATES AND VARIATION LATERAL DOPING
THEORY OF OPTIMUM DESIGN OF REVERSE-BIASED P-N-JUNCTIONS USING RESISTIVE FIELD PLATES AND VARIATION LATERAL DOPING
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DOI：
10.1016/0038-1101(92)90173-a
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发表时间：
1992-09-01
影响因子：
1.7
通讯作者：
LI, ZJ
中科院分区：
文献类型：
--
作者：
CHEN, XB;ZHANG, B;LI, ZJ
用其结构引起的表面电荷解释了电阻场板（RFP）和变差横向掺杂（VLD）对反向偏置pn结边缘峰场减小的影响。得到了在RFP和VLD下的场分布曲线的解析解，并由此得到了VLD的最佳掺杂分布曲线。给出了这两种结构的击穿电压与表面耗尽宽度的关系。利用JTE的多个区域实现最佳VLD的方法是令人满意的。
The effect of the reduction of the peak field at the edges of reverse-biased p-n junctions by the resistive field plate (RFP) and variation lateral doping (VLD) is explained with the surface charges induced by their structures. Analytical solutions of the field profile under the RFP and under the VLD were found, from which the optimum doping profile of the VLD can also be found. The relations between the breakdown voltage and the surface depletion width for these two structures are proposed. The realization of the optimum VLD by an approach using multiple zones of the JTE is proved to be satisfactory.