Epitaxial liftoff of ZnSe-based heterostructures using a II-VI release layer
Epitaxial liftoff of ZnSe-based heterostructures using a II-VI release layer
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DOI：
10.1063/1.1844595
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发表时间：
2005-01-03
影响因子：
4
通讯作者：
Warburton, RJ
中科院分区：
文献类型：
--
作者：
Balocchi, A;Curran, A;Warburton, RJ
外延剥离是一种后生长过程，通过该过程，半导体异质结构的活性部分，即外延层，被从其原始衬底上移除并沉积到新的衬底上。这在GaAs基异质结中是一种成熟的技术，在这种异质结构中，可以通过利用GaAs和AlAs在氢氟酸中的腐蚀速率的对比来实现外延提升。我们在这里报道了一种成功的基于ZnSe的异质结的外延提拉。我们发现亚稳层是一个理想的释放层，这是基于锌硒和亚稳层在盐酸中的腐蚀速率的巨大反差。毫米尺寸的锌硒样品的外延发射所需的时间仅为砷化镓发射所需时间的一小部分。光致发光实验证实，提升层具有与原始晶片材料相同的光学特性。(C)2005年美国物理研究所。
Epitaxial liftoff is a post-growth process by which the active part of a semiconductor heterostructure, the epitaxial layer, is removed from its original substrate and deposited onto a new substrate. This is a well established technique in GaAs-based heterostructures where epitaxial liftoff can be achieved by exploiting the contrast in the etch rates of GaAs and AlAs in hydrofluoric acid. We report here successful epitaxial liftoff of a ZnSe-based heterostructure. We find that a metastable layer of MgS acts as a perfect release layer based on the huge contrast in the etch rates of ZnSe and MgS in hydrochloric acid. Epitaxial liftoff of millimeter-sized ZnSe samples takes a fraction of the time required for GaAs liftoff. Photoluminescence experiments confirm that the liftoff layer has the same optical characteristics as the original wafer material. (C) 2005 American Institute of Physics.