Finite-Zone Argon Implant Edge Termination for High-Voltage GaN Schottky Rectifiers
Finite-Zone Argon Implant Edge Termination for High-Voltage GaN Schottky Rectifiers
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DOI：
10.1109/led.2011.2162221
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发表时间：
2011-08
影响因子：
4.9
通讯作者：
A. M. Ozbek;B. Baliga
中科院分区：
文献类型：
--
作者：
A. M. Ozbek;B. Baliga
本文报道了在GaN肖特基势垒二极管外围用Ar离子注入实现有限终止的结果。结果表明，获得1700V的理想平面平行击穿电压所需的注入区宽度为50μm。
In this letter, the results obtained with a finite termination by argon ion implantation at the periphery of GaN Schottky barrier diodes are reported. It is demonstrated that the implant region width required to obtain the ideal plane parallel breakdown voltage of 1700 V is 50 μm.