Grain boundary engineering for control of tellurium diffusion in GH3535 alloy
Grain boundary engineering for control of tellurium diffusion in GH3535 alloy
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控制 GH3535 合金中碲扩散的晶界工程
DOI：
10.1016/j.jnucmat.2017.10.052
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发表时间：
2017
影响因子：
3.1
通讯作者：
Fang Liu
中科院分区：
文献类型：
--
作者：
Fu Cai Tao;Wang Yinling;Chu Xiang Wei;Li Jiang;Zhang Wen Zhu;Qin Bai;Shuang Xia;Bin Leng;Li Zhi Jun;Ye Xiang Xi;Fang Liu
研究了晶界工程（GBE）对Te在GH3535合金表面晶界沿着扩散的影响。结果表明，GBE处理明显增加了低重位点阵（CSL）晶界的比例，特别是重位3晶界，并引入了大尺寸的晶粒团簇。当收到的（AR）和GBE处理（GBET）标本暴露于Te蒸气，只有103边界被发现是抗Te扩散。从横截面和表面上可以观察到，在GBET样品中，较少的Te侵蚀晶界和较薄的腐蚀层。GBET样品中Te扩散阻力的改善可以归因于与高比例的晶界相关的大尺寸晶粒簇。
The effect of grain boundary engineering (GBE) on the Te diffusion along the surface grain boundaries was investigated in GH3535 alloy. It can be found that GBE treatment increases obviously the fraction of low-Σ coincidence site lattice (CSL) boundaries, especially the Σ3 ones, and introduces the large-size grain clusters. When the as-received (AR) and GBE-treated (GBET) specimens were exposed to Te vapor, only Σ3 boundaries were found to be resistant to Te diffusion. From the cross section and the surface, the fewer Te-attacked grain boundaries and the thinner corrosion layer can be observed in the GBET sample. The improvement of resistance to Te diffusion in the GBET sample can be attributed to the large size grain-clusters associated with high proportion of the Σ3nboundaries.