Light emission and detection characteristics of GaInAsP lateral current injection lasers for planar optoelectronic integrated circuits
Light emission and detection characteristics of GaInAsP lateral current injection lasers for planar optoelectronic integrated circuits
复制标题
平面光电集成电路GaInAsP横向电流注入激光器的发光与检测特性
DOI:
10.1109/jstqe.2002.806727
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发表时间:
2002
影响因子:
4.9
通讯作者:
K. Oe
中科院分区:
文献类型:
--
作者:
S. Murata;M. Arai;K. Oe
The light emission and detection characteristics of a GaInAsP lateral current injection (LCI) laser were studied to examine feasibility for optoelectronic functional devices. LCI lasers which can be fabricated on semi-insulating substrates in quasi-planar structures are very appropriate for integration with electronic devices, and are promising light sources for optoelectronic integrated circuits (OEICs). For the light emission characteristics, the LCI laser has a modulation bandwidth above 2 GHz. Also, good eye openings at 1-Gb/s signals is confirmed for the laser in eye diagrams for pseudorandom bit stream input signals. For the light detection characteristics, the 3-dB detection bandwidth of more than 2 GHz, high responsivity of 0.54 A/W, and small polarization dependence of 0.17 dB are confirmed. These performances show that the LCI laser might be a good candidate for the light emission and detection diode in OEICs in future.