Photo-response of a P3HT:PCBM blend in metal-insulator-semiconductor capacitors
Photo-response of a P3HT:PCBM blend in metal-insulator-semiconductor capacitors
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DOI：
10.1063/1.4901099
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发表时间：
2014-11-03
影响因子：
4
通讯作者：
Taylor, D. M.
中科院分区：
文献类型：
--
作者：
Devynck, M.;Rostirolla, B.;Taylor, D. M.
研究了金属-绝缘体-半导体电容器，其中绝缘体为交联聚乙烯基苯酚，活性层为聚（3-己基噻吩）、P3 HT和电子受体[6，6]-苯基-C-61-丁酸甲酯（PCBM）的共混物。在黑暗中获得的导纳谱和电容电压测量都显示类似的行为，以前观察到的P3 HT只有设备。然而，在P3 HT：PCBM的情况下，光电容响应显著增强，其中激子解离导致电子转移到PCBM组件中。结果与PCBM聚集体的网络是一致的，该网络是连续的通过膜，但在共混物/绝缘体界面处或附近的聚集体之间没有横向互连。(C)2014年作者。
Metal-insulator-semiconductor capacitors are investigated, in which the insulator is cross-linked polyvinylphenol and the active layer a blend of poly(3-hexylthiophene), P3HT, and the electron acceptor [6,6]-phenyl-C-61-butyric acid methyl ester (PCBM). Admittance spectra and capacitance-voltage measurements obtained in the dark both display similar behaviour to those previously observed in P3HT-only devices. However, the photo-capacitance response is significantly enhanced in the P3HT: PCBM case, where exciton dissociation leads to electron transfer into the PCBM component. The results are consistent with a network of PCBM aggregates that is continuous through the film but with no lateral interconnection between the aggregates at or near the blend/insulator interface. (C) 2014 Author(s).