Intervalley Scattering of Hot Electrons in Germanium at Millikelvin Temperatures
Intervalley Scattering of Hot Electrons in Germanium at Millikelvin Temperatures
复制标题
毫开尔文温度下锗中热电子的谷间散射
DOI：
10.1007/s10909-014-1091-y
复制
发表时间：
2014
影响因子：
2
通讯作者：
A. Broniatowski
中科院分区：
文献类型：
--
作者：
A. Broniatowski
本文提出了一种确定锗中热电子谷间散射率场依赖关系的方法，该方法基于对带有分段电极的探测器晶体中电子散射的分析。在毫开尔文温度下对高纯度和轻掺杂n型和p型晶体的测量表明，杂质散射在低场（$$<\sim $$ < ～几V/cm）下起主导作用，而声子散射在高场强度下起优先作用。结合以往对锗中声电效应的研究，对实验数据进行了分析，有力地表明所涉及的杂质是处于中性态的掺杂物质。
A method is presented to determine the field dependence of the intervalley scattering rate for hot electrons in germanium, based on an analysis of electron straggle in a detector crystal fitted with segmented electrodes. Measurements in high-purity and in lightly doped n- and p-type crystals at millikelvin temperatures demonstrate the dominant role of impurity scattering at low field ($$<\sim $$<∼a few V/cm), whereas phonon scattering takes precedence at higher field intensities. An analysis of the experimental data by reference to past investigations of the acoustoelectric effect in germanium strongly suggests that the impurities involved are the dopant species in the neutral state.