Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy
Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy
复制标题
DOI：
10.1103/physrevmaterials.3.053401
复制
发表时间：
2019-05
影响因子：
3.4
通讯作者：
A. Pandey;Xianhe Liu;Z. Deng;W. Shin;D. Laleyan;Kishwar Mashooq;E. Reid;E. Kioupakis;P. Bhattacharya;Z. Mi
中科院分区：
文献类型：
--
作者：
A. Pandey;Xianhe Liu;Z. Deng;W. Shin;D. Laleyan;Kishwar Mashooq;E. Reid;E. Kioupakis;P. Bhattacharya;Z. Mi
